Nuclear power plant, method of forming corrosion-resistant coating therefor, and method of operating nuclear power plant

ABSTRACT

In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.

BACKGROUND OF THE INVENTION

1,Field of the Invention

The present invention relates to a technology for suppressing corrosionof metal components, such as nuclear power plant's structuralcomponents, in contact with high-temperature water, and moreparticularly, relates to a nuclear power plant having acorrosion-resistant coating, a method of making such acorrosion-resistant coating and a method of operating the nuclear powerplant.

2,Related Art

Metal components exposed to high temperature environment are found inalmost all of the modern industrial and commercial plants. For example,in the course of steam reforming in a hydrogen production chemicalplant, the reaction is carried out at high temperatures and pressures.Inside a boiler or a metal pipe connected to the boiler, hot water andsteam move or travel while causing corrosion. The conventionalpreventive measures against corrosion of metal components have involveduse of expensive, special corrosion-resistant materials, improvements onthe environment to which the metal components are exposed, etc. Forexample, in a thermal power plant, a pH control reagent, a deoxidizer,or the like is added to control water chemistry and to thereby reducethe corrosion.

In a boiling-water nuclear power plant, oxygen, hydrogen peroxide, andthe like produced by radiolysis of water in the radiation field exist ina state dissolved in the reactor water. It is a well-known fact thatstainless steel and nickel-based alloys, which are used for reactorstructural components of the nuclear power plant, generate stresscorrosion cracking in the presence of oxygen and hydrogen peroxide in ahigh-temperature environment such as a nuclear reactor.

Hydrogen injection of injecting hydrogen into the reactor water hasapplied to some BWR plants in the world to reduce oxygen and hydrogenperoxide dissolved in the reactor water (refer to GENSHIRO MIZU-KAGAKUHANDBOOK [Handbook of Water Chemistry of Nuclear Reactor System], editedby Atomic Energy Society of Japan, published by Corona Publishing Co.,Ltd., on Dec. 27, 2000,p. 210). The effect of the oxygen and hydrogenperoxide reduction by the hydrogen injection is confirmed as thedecrease in corrosion potential of the metal components. The generationof stress corrosion cracking and the crack growth rate depends on thecorrosion potential. The lower the corrosion potential, more suppressedthe generation of stress corrosion cracking and development of cracks.As a result, the lifetime of the metal components can be extended.

Other nuclear power plants in and outside Japan employ noble metalinjection technology of conducting hydrogen injection after depositionof a noble metal, such as platinum (Pt) or rhodium (Rh), on surfaces ofreactor structural components to accelerate reaction with hydrogen,increase the anode current to thereby decrease the corrosion potential(see the specification of Japanese Patent No. 2624906).

The meaning of the corrosion potential of the metal components is asfollows. When a metal is immersed in an electrolyte, the metal shows apotential inherent to that metal. This potential is called “spontaneouspotential” of that metal. A corroded metal material shows a potentialdifferent (polarized) from its spontaneous potential due to thecorrosion reaction. This difference in potential is referred to as the“corrosion potential”. A continuous measurement of the potentialdifference will estimate the progression of the corrosion.

In a uniformly corroded metal material, the cathode reaction (reductionreaction) and the anode reaction (oxidization reaction) reach anequilibrium at the intersection of the cathode reaction polarizationcurve and the anode reaction polarization curve. This intersectioncorresponds to the corrosion potential.

Another approach that has recently drawn much attention for decreasingthe corrosion potential is to utilize the photocatalytic reaction. Bycoating surfaces of the metal components with a photocatalyst andirradiating the photocatalyst with light having wavelength nearultraviolet, electrons activated by the photoexcitation reaction causethe corrosion potential to decrease. The photoexcitation reaction can beaccelerated with a noble metal disposed nearby.

Accordingly, by depositing a photocatalyst or a high-efficiencyphotocatalyst containing a noble metal onto surfaces of the reactorstructural components and inducing photoexcitation reaction by Cerenkovradiation generated in the reactor core, the corrosion potential duringoperation can be reduced (for example, refer to Japanese PatentLaid-open Publication Nos. 2001-4789 and 2001-276628).

As the method of preventing parts of the metal components from corrosionin the absence of light, a technology for decreasing the potentialdifference by generating thermostimulated current utilizing thermalenergy instead of light energy has been suggested (refer to JapanesePatent Laid-open Publication No. 2003-232886).

Another corrosion reduction method proposed is to alternately laminateN-type semiconductor coatings and P-type semiconductor coatings ontosurfaces of metal components (refer to Japanese Patent Laid-openPublication No. 9-125283). Yet another corrosion method proposed is toprovide a coating consisting of three or more alternately stacked layersof an anion-permselective substance and a cation-permselective substance(refer to Japanese Patent Laid-open Publication No. 11-12719).

According to the technology disclosed in Japanese Unexamined PatentApplication Publication No. 2001-4789,electrons irradiated with lightare activated by the photoexcitation reaction, thereby generatingelectrical current that decreases the corrosion potential. The corrosionprevention effect is, however, rarely expected in parts not exposed tolight.

In contrast to the corrosion prevention technology utilizingphotoexcitation, a technology of decreasing the corrosion potential byutilizing electrical current produced by thermostimulated electrons isdisclosed in Japanese Patent Laid-open Publication No.2003-232886,According to this technology of producing thethermostimulated current, holes generated by thermostimulation causeanode reaction to occur and thereby increase the current. In an actualcases, however, the electrons stimulated by heat recombine with holesgenerated by the same thermostimulation, and the electric current doesnot easily flow. In order to efficiently convert the stimulatedelectrons and holes into a flow of electrical current, charge separationneeds to be reliably carried out. Furthermore, the state that allowscharge separation needs to be constantly maintained, and the ambientenvironmental conditions to which the metal components are exposed mustbe taken into consideration.

In addition, nuclear power plants have inside a substantially largenumber of narrowed parts and parts with complicated shapes. Thus, thecorrosion prevention methods utilizing the semiconductor propertiesdisclosed in Japanese Patent Laid-open Publication Nos. 9-125283 and11-12719 would face difficulty in application.

SUMMARY OF THE INVENTION

The present invention was conceived in consideration of thecircumstances in the prior art mentioned above and has an object toprovide a nuclear power plant having a corrosion-resistant coating thatcan ensure suppression of corrosion due to stress corrosion cracking invarious locations of reactor structural components not exposed to lightand that can effectively maintain the effect of corrosion suppressionfor a long time.

Another object of the present invention is to provide a method offorming such a corrosion-resistant coating and a method of operating thenuclear power plant at an improved efficiency.

These and other objects can be achieved according to the presentinvention by providing, in one aspect, a nuclear power plant, wherein acorrosion-resistant oxide film is formed on a surface of a metalcomponent of a reactor structure exposed to high-temperature water, thecorrosion-resistant oxide film containing an oxide having a property ofa P-type semiconductor, and a catalytic substance having an N-typesemiconductor is deposited on the corrosion resistant oxide film so thatthe oxide film maintains the property of the P-type semiconductor.

In another aspect, there is also provided a method of forming acorrosion-resistant coating on a surface of a metal component of areactor structure exposed to high-temperature water, the methodcomprising:

an oxide film forming step of controlling a water chemistry inside areactor using a hydrogen injection device to deposit and/or form anoxide having a property of a P-type semiconductor in a reducingatmosphere or converting an existing oxide film; and

a catalytic substance deposition step of depositing a catalyticsubstance on the oxide film, the catalytic substance having a propertyof an N-type semiconductor while retaining the property of the P-typesemiconductor.

In a further aspect of the present invention, there is also provided amethod of operating a nuclear reactor in which a corrosion-resistantcoating is formed on a surface of a metal component of a reactorstructure exposed to high-temperature water, the method comprising thesteps of:

monitoring a corrosion potential at the surface of the metal componentto examine a property of the oxide film; and

controlling a water chemistry in the reactor to maintain and restore acorrosion-resistant oxide film.

According to the above aspects of the present invention, thecorrosion-resistant oxide film can be formed so as to achieve thefunctions and effects of the property or performance of the N-typesemiconductor while maintaining or retaining the property of the P-typesemiconductor. The suppression of corrosion due to stress corrosioncracking of metal components of a reactor structure can be ensured, andthe effect of suppressing corrosion of metal components can bemaintained for a long period of time.

The nature and further characteristic features of the present inventionwill be made more clear from the following descriptions made withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a schematic diagram showing an embodiment of a nuclear powerplant according to the present invention;

FIG. 2 is a diagram showing a corrosion-resistant coating prepared byforming an oxide film having properties of a P-type semiconductor on asurface of a metal substrate for a reactor structural component and thendepositing a catalytic substance having properties of an N-typesemiconductor on the oxide film;

FIG. 3 is a diagram showing charge separation due to a pn junction;

FIG. 4 is a graph showing a change in corrosion potential (280° C.)versus the amount of injected hydrogen when an oxide film composed ofFe₃O₄, which is a P-type semiconductor, is on a surface of a stainlesssteel and TiO₂, which is an N-type semiconductor, is deposited on theoxide film;

FIG. 5 is a graph showing the influence of the particle diameter of aP-type semiconductor oxide on the corrosion potential;

FIG. 6 is a graph showing the influence of the thickness of a P-typesemiconductor oxide on the corrosion potential;

FIG. 7A shows the relationship between the thickness of an oxide film ona stainless steel and the amount of titanium oxide deposited and FIG. 7Bshows the relationship between the thickness of an oxide film on Alloy600 and the amount of titanium oxide deposited;

FIG. 8A shows the relationship between the thickness of an oxide film ona stainless steel and the amount of titanium oxide deposited and FIG. 8Bshows the relationship between the thickness of an oxide film on Alloy600 and the amount of titanium oxide deposited for extending thelifetime of the plant;

FIG. 9 is a graph showing the relationship between the amount oftitanium oxide deposited and the corrosion potential;

FIG. 10 is a graph showing the potential-pH diagram for Fe—H₂O system;

FIG. 11 is a graph showing the effect of reducing the corrosionpotential yielded by the combination of Fe₃O₄ oxide film and the TiO₂catalytic substance (spray deposited);

FIG. 12 is a schematic diagram of a device for spray deposition;

FIG. 13 is a schematic diagram showing a system for injecting atomsconstituting a P-type semiconductor and a hydrogen injection system;

FIG. 14 is a graph showing the effect of reducing corrosion potential bythe combination of ZnCr₂O₄ and TiO₂ (flame sprayed);

FIG. 15 is a graph showing the effect of reducing corrosion potential bythe combination of Fe₃O₄ and TiO₂ (water chemistry deposition);

FIG. 16 is a schematic diagram showing a water chemistry depositiondevice;

FIG. 17 is a graph showing the relationship between the amount oftitanium oxide (catalytic substance) deposited and the deposition timeand indicating the change-over time during the water chemistrydeposition;

FIG. 18 is a schematic diagram showing the system for corrosionpotential measurement;

FIG. 19 is a graph showing the change in corrosion potential over timeunder water chemistry of recirculation water corresponding to afeedwater hydrogen concentration of 0.3 ppm;

FIG. 20 is a graph showing the change in corrosion potential over timeunder the water chemistry of recirculation water corresponding to afeedwater hydrogen concentration of 0.1 ppm;

FIG. 21 is a graph showing the method of reducing and maintaining anoxide film by reduction in order to maintain a low corrosion potential;and

FIG. 22 is a graph showing the relationship between the corrosionpotential and crack growth rate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The preferred embodiments of the nuclear power plant, method of forminga corrosion-resistant coating for the nuclear power plant, and method ofoperating the nuclear power plant according to the present inventionwill be described hereunder with reference to the attached drawings.

Further, it is to be noted that terms “upper”, “lower”, “right”, “left”and the likes terms are used herein with reference to the illustrationson the drawings or actually installing state of a reactor power plant.

FIG. 1 is a schematic diagram showing a boiling water reactor (BWR,hereinafter) 11 and a cooling water circulation system 12 of a nuclearpower plant 10 according to the present invention.

The BWR 11 includes a reactor pressure vessel 13 and a cylindricalshroud 14 inside the reactor pressure vessel 13. A reactor core 15 isdisposed inside the cylindrical shroud 14. A lower plenum 16 is disposedbelow the reactor core 15, and the reactor water inside the reactorpressure vessel 13 is introduced into the lower plenum 16 through aplurality of jet pumps 17, for example, ten jet pumps 17.

The jet pumps 17 operate by tracking the operation of recirculationpumps 19 of a pair of reactor recirculation systems 18. Eachrecirculation pump 19 is provided to a recirculation pipe 20 forrecirculating the reactor water inside the reactor pressure vessel 13.The ejection (pump-out) side of the recirculation pipe 20 is opposed tothe inlet side of the jet pump 17.

In each reactor recirculation system 18, the recirculation pump 19 isdriven to discharge recirculation water from the ejection side of therecirculation pipe 20, and the flow of the discharged recirculationwater merges with the reactor water around the jet pump 17 to therebyguide the reactor water into the lower plenum 16.

The flow of the reactor water is reversed in the lower plenum 16 andheated by means of nuclear reaction as it passes over the reactor core15, thereby forming a steam-liquid two-phase flow. The steam-liquidtwo-phase flow is separated by a steam separator, not shown, into asteam component and a liquid component above the reactor core 15. Theliquid component returns to reactor water and re-enters a downcomerportion 21 of the reactor pressure vessel 13.

The steam component is dried in a steam drier (not shown), and theresulting dry steam (main steam) is fed to a main steam system 25. Themain steam fed into the main steam system 25 is then introduced into asteam turbine 27 through a main steam pipe 26 to drive a generator 28.

The expanded steam that had been used to drive the steam turbine 27 isled to a condenser 29 where the steam is cooled and condensed to give asteam condensate. The condensate passes through a condensate watersupply system 30 and flows back into the reactor pressure vessel 13 viaa water supply pipe 31 serving as a water supply line so as to combinewith the reactor water inside the reactor pressure vessel 13. A watersupply pump 32 and a multistage water supply heater (not shown) areprovided to the water supply pipe 31.

The water fed into the reactor pressure vessel 13 via the condensatewater supply system 30 partially circulates in the recirculation pipes20 of the reactor recirculation systems 18 by the operation of therecirculation pumps 19.

Part of the recirculation water in the recirculation pipe 20 iscirculated in a residual heat removal (RHR) system 35 with an RHR-systempump 36 or in a reactor water cleanup (CUW or RWCU) system 40 with aCUW-system pump 41.

The RHR-system pump 36 has an RHR pipe 37 diverging from therecirculation pipe 20 of the reactor recirculation system 18. The RHRpipe 37 has the RHR-system pump 36 and a heat exchanger 38. Thedownstream end of the RHR pipe 37 is connected to the reactor pressurevessel 13 so that part of the recirculation water can be circulated andreturned to the reactor pressure vessel 13.

The pipe configuration of the RHR system 35 is designed to suit the mosttypical operation mode for removing decay heat after the reactorshutdown. The circulation water cooled in the RHR system 35 is sprayedfrom the upper portion or the top of the reactor pressure vessel 13 tocool the head unit of the reactor pressure vessel 13.

The pipe arrangement of the RHR system 35 is designed to operate in fivemodes, namely, a reactor shutdown cooling mode, a low-pressure waterinjection mode, a reactor container cooling mode, a pressure suppressionpool water cooling mode, and a fuel pool cooling mode.

The reactor water cleanup (CUW) system 40 has a CUW-system pipe 42diverging from the recirculation pipe 20 of the reactor recirculationsystem 18. The CUW-system pipe 42 has a heat exchanger 43, theCUW-system pump 41 and a filter demineralizer 44, and is connected tothe water supply pipe 31 of the condensate water supply system 30.

The CUW system 40, the RHR system 35, a reactor auxiliary cooling system(not shown), a high-pressure reactor core spray system (not shown), anda fuel pool cooling and cleanup system (not shown) constitute thecooling water circulation system 12.

The reactor pressure vessel (RPV) 13, the reactor recirculation systems18, the main steam system 25, and the condensate water supply system 30constitute a reactor primary cooling system 45.

The nuclear power plant 10 has the reactor primary cooling system 45 andthe cooling water circulation system 12, in each of which an austeniticstainless steel, such as SUS304 (18Cr-8Ni-0.06C), SUS304L containing0.03% or less of C, SUS316 (18Cr-12Ni-2.5Mo) having improved corrosionand acid resistance, or SUS316L containing Mo, having excellentcorrosion resistance, workability, formability and weldability, iswidely used.

The nuclear power plant 10 also has injection points P for connectingwith a hydrogen injection system 46. The hydrogen injection system 46 isprovided to form corrosion-resistant oxide films having properties of aP-type semiconductor onto surfaces of reactor structural metalcomponents, such as pipes, various devices, and structural materialsinside the reactor.

The hydrogen injection system 46 can be connected to one or moreinjection points P located in the water supply pipe 31 of the condensatewater supply system 30, the recirculation pipe 20 of the reactorrecirculation system 18, the RHR pipe 37, of the RHR system 35, theCUW-system pipe 42 of the CUW system 40, and the like. The amount ofinjection hydrogen can be controlled from these injection points P. Thewater chemistry in the reactor can be controlled by adjusting the amountof the injection hydrogen. By controlling the water chemistry inside thereactor as mentioned above, oxide films having the properties of aP-type semiconductor can be formed on the surfaces (inner and outersurfaces) of the reactor structural metal components, such as variouspipes, devices, and internal structural materials. These oxide films arecorrosion resistant.

Referring to FIG. 1, the reactor is also provided with a corrosionpotential analyzer 47 including a test piece for monitoring thecorrosion potential and shut-off valves 48. The corrosion potentialanalyzer 47 is installed onto the recirculation pipe 20 of the reactorrecirculation system 18.

Hereunder, preferred embodiments of the present invention will bedescribed more specifically.

First Embodiment

A first embodiment of the present invention will be described withreference to FIGS. 2 to 4.

In the first embodiment, the austenitic stainless steel widely used inthe reactor structural materials of the reactor primary cooling system45 and the cooling water circulation system 12 of the nuclear powerplant 10 is provided with corrosion-resistant oxide films.

FIG. 2 is a schematic diagram showing a surface of a metal componenthaving a corrosion-resistant coating on the surface of SUS316L stainlesssteel, which is one example of the austenitic stainless steel.

In this embodiment, a corrosion-resistant, corrosion-protective oxidefilm (film) 51 composed of an oxide, such as Fe₃O₄, having theproperties of a P-type semiconductor is formed on a metal base material50 composed of SUS316L stainless steel, and titanium oxide serving as acatalytic substance 52 having the properties of a N-type semiconductoris deposited on the oxide film 51.

The catalytic substance 52 may be deposited on the oxide film 51 byforming a layer. The form of the catalytic substance 52 is not limitedto the layer form. The catalytic substance 52 may be scattered into amatrix form or may be deposited as lines. The metal base material 50 isexposed to high-temperature water of 150° C. or higher, in particular,to reactor water of about 280° C.

Although FIG. 2 shows an example that uses the SUS316L stainless steelas the austenitic stainless steel for the metal base material 50, themetal base material 50 may be made of a stainless steel alloy, ironsteel, a non-steel material, or a non-ferrous metal. Although the oxidefilm for the metal base material 50 described above is composed ofFe₃O₄, the oxide film may instead be formed of an oxide such as FeO,NiO, PdO, UO₂, WO₂, Cr₂O₃, NiCr₂O₄, ZnCr₂O₄, CoCr₂O₄, FeCr₂O₄, MnO,Mn₂O₃, Mn₃O₄, CO₃O₄, CoO, Cu₂O, Ag₂O, CoAl₂O₄, MgCr₂O₄, NiAl₂O₄, or PbO,or at least one of them. The oxide film 51 having the properties of aP-type semiconductor should be formed on the surface of the metal basematerial 50 exposed to high-temperature water. In an actual nuclearpower plant, the thickness of the oxide film 51 is 0.001μm or more,preferably 0.01 μm to 5 μm, for example.

The oxide having the P-type semiconductor is composed of at least one ofFe₃O₄, FeO, NiO, PdO, UO₂, WO₂, Cr₂O₃, NiCr₂O₄, ZnCr₂O₄, CoCr₂O₄,FeCr₂O₄, MnO, Mn₂O₃, Mn₃O₄, Co₃O₄, CoO, Cu₂O, Ag₂O, CoAl₂O₄, MgCr₂O₄,NiAl₂O₄, and PbO.

Titanium oxide (TiO₂) having the properties of a N-type semiconductorand serving as the catalytic substance 52 is deposited on the oxide film51 having the properties of a P-type semiconductor. Instead of thetitanium oxide (TiO₂), BaTiO₃, Bi₂O₃, ZnO, WO₃, SrTiO₃, Fe₂O₃, FeTiO₃,KTaO₃, MnTiO₃, SnO₂, ZrO₂, CeO₂, In₂O₃, Al₂O₃, MgO, MgFe₂O₄, NiFe₂O₄,MnO₂, MoO₃, Nb₂O₅, SnO₂, SiO₂, PbO₂, V₂O₅, ZnFe₂O₄, ZnAl₂O₄, ZnCo₂O₄, orTa₂O₅, or at least one of them may be used as the catalytic substance 52that serves as the N-type semiconductor.

The catalytic substance having the property of the N-type semiconductoris at least one of TiO₂, BaTiO₃, Bi₂O₃, ZnO, WO₃, SrTiO₃, Fe₂O₃, FeTiO₃,KTaO₃, MnTiO₃, SnO₂, Zr0 ₂, CeO₂, In₂O₃, Al₂O₃, MgO, MgFe₂O₄, NiFe₂O₄,MnO₂, MoO₃, Nb₂O₅, SnO₂, SiO₂, PbO₂, V₂O₅, ZnFe₂O₄, ZnAl₂O₄, ZnCo₂O₄,and Ta₂O₅.

A pn-junction is formed at the junction face between the P-typesemiconductor and the N-type semiconductor, as shown in FIG. 3, bydepositing the oxide film 51 composed on an oxide having the propertiesof a P-type semiconductor on the surface of the metal base material 50and by depositing the catalytic substance 52 having the properties of anN-type semiconductor on the oxide film 51. The change in energy levelcauses a band 55 to contain a bandgap G.

Since the band 55 contains a gap, an electron 56 and a hole 57 producedby thermal excitation E respectively migrate to a conduction band 58 ofthe N-type semiconductor and a valence band 59 of the P-typesemiconductor. The migration of the electron 56 and the hole 57 cansuppress recombination of the electron 56 and the hole 57 and allowscharge separation to proceed. The electron 56 and the hole 57 contributeto the oxidation-reduction reaction in high-temperature water andthereby change the corrosion potential.

FIG. 4 is a graph showing dependence of the corrosion potential on thewater chemistry of high-temperature water of, for example, 280° C. Inthe graph, the corrosion potential of a case in which the oxide film 51composed of Fe₃O₄, which is a P-type semiconductor, is disposed onto thesurface of the austenitic stainless steel, 316L (metal base material 50)and 10 μg/cm² or more, in particular, about 50 μg/cm², of the catalyticsubstance 52, which is titanium oxide (TiO₂) and is an N-typesemiconductor, is deposited on the oxide film 51 is plotted (solid lineA), and the corrosion potential of a case in which no titanium oxide isdeposited is plotted (dotted line B).

In the case of the BWR 11, due to the presence of titanium oxide, thecorrosion potential does not exceed −0.1 V(SHE) and is about −0.5 V whenthe circulation water in the recirculation pipe 20 of the reactorrecirculation system 18 has a feedwater hydrogen concentration of 0.3ppm.

As is described above, the formation of the pn-junction in the oxidefilm 51 causes charge separation, decreases the corrosion potential andsuppresses corrosion of the metal base material 50. The lower thecorrosion potential, the greater the corrosion resistance achieved bythe oxide film 51.

Second Embodiment

A second embodiment of the present invention will be described hereunderwith reference to FIGS. 5 and 6.

In this second embodiment, the structures identical to those of thefirst embodiment are referred to by adding the same reference numeralsand explanation thereof is omitted herein, and the effects identical tothose of the first embodiment are also attained, which are not describedto avoid redundancy.

FIG. 1 is a schematic diagram showing a boiling water reactor (BWR,hereinafter) 11 and a cooling water circulation system 12 of a nuclearpower plant 10 according to the present invention. Zone Name: A2,AMD

FIG. 5 is a graph showing the influence of the particle diameter of theoxide having the properties of the P-type semiconductor deposited on thesurface of the metal base material 50 on the corrosion potential V. Thegraph shows results of a case in which an Fe₃O₄ oxide film 51 is formedon the metal component made of austenitic stainless steel, SUS316L, anda case in which an NiO oxide film 51 is formed on the metal basematerial 50 made of stainless steel alloy, i.e., an Ni-basedcorrosion-resistant alloy, Alloy 600 (Inconel 600). A solid line C showsthe corrosion potential curve of the case in which the Fe₃O₄ oxide film51 is formed on the austenitic stainless steel, SUS316L, and a dashedline D shows the corrosion potential curve of the case in which the NiOoxide film 51 is formed on the surface of the Ni-CrFe alloy, i.e., Alloy600.

The catalytic substance 52 deposited on the oxide film 51 is titaniumoxide, and the amount of the titanium oxide is 50 μg/cm² in both thecases. The corrosion potential V is measured under water chemistryconditions of the recirculation water of the reactor recirculationsystem 18 having a feedwater hydrogen concentration of 0.3 ppm.

As is apparent from the results of the test in FIG. 5, the corrosionpotential V shows a tendency to decrease as the particle diameter of theoxide having the properties of the P-type semiconductor decreases. Asthe particle diameter of the oxide (Fe₃O₄ or NiO) decreases, the area ofthe pn-junction formed between the oxide and titanium oxide, which isthe N-type semiconductor, increases. Presumably, this is advantageousfor the charge separation and thus decreases the corrosion potential.The results show that, since the corrosion potential needs to be −0.05V(SHE) or less for SUS316L and 0.0 V(SHE) or less for Alloy 600,theparticle diameter of the oxide needs to be 1 μm or less.

FIG. 6 is a graph showing the influence of the thickness of the oxidefilm 51 having the properties of the P-type semiconductor on thecorrosion potential V(SHE). The graph shows the results of a case inwhich an Fe₃O₄ oxide film 51 is formed on the metal component made ofaustenitic stainless steel, SUS316L, and a case in which a NiO oxidefilm 51 is formed on the metal base material 50 made of stainless steelalloy, i.e., a Ni-based corrosion-resistant alloy, Alloy 600 (Inconel600). A solid line C₁ is a corrosion potential curve of the case inwhich the Fe₃O₄ oxide film 51 is formed on the austenitic stainlesssteel, SUS316L, and a dashed line D₁ shows the corrosion potential curveof the case in which the NiO oxide film 51 is formed on the surface ofthe Ni-based stainless steel alloy of Alloy 600.

The corrosion potential curve C₁ for SUS316L shows that the corrosionpotential does not exceed −0.05 V(SHE) with the oxide film 51 having athickness of 0.001 to 1 μm. The corrosion potential curve D₁ for theNi-based stainless steel alloy of Alloy 600 shows that the corrosionpotential is maintained at 0.0 V or less with an oxide film 51 having athickness of 0.001 μm to 1 μm. The curves C₁ and D₁ indicate that thecorrosion potential is maintained at a negative value with the oxidefilm 51 having the properties of a P-type semiconductor and a thicknessof 0.001 to 1 μm and that the interaction between the oxide, e.g.,titanium oxide, and the P-type semiconductor decreases the corrosionpotential.

In an actual nuclear power plant 10, deposition of an oxide film in athickness of 0.01 to 0.05 μm is confirmed. Thus, the corrosionresistance of the oxide film can be expected even in an actual plant.

The particles of the Fe₃O₄ oxide film 51 are small and maintained toabout 0.01 μm to about 0.1 μm in diameter. The thickness of the oxidefilm 51 is not likely to decrease to less than 0.01 μm even when thethin film of the oxide particles is formed as a single layer. Thus, theoxide film 51 will have a thickness of at least 0.01 μm. In an actualplant, the substantial application range of the thickness of the oxidefilm 51 is from about 0.01 μm to about 5 μm.

The longevity of the nuclear power plant 10 is determined by thelifetimes of the metal components (metal materials) used in reactorstructural components such as various devices and pipes of the reactorprimary cooling system 45 and the cooling water circulation system 12.

The corrosion potential is set according to the longevity of the nuclearpower plant 10 by adjusting the oxide film 51 deposited onto the surfaceof the metal base material 50. When a nuclear power plant 10 has atypical longevity, the corrosion potential of the metal components suchas various devices and pipes of the reactor primary cooling system 45and the cooling water circulation system 12 is maintained within regionsidentified as “Corrosion Potential Area (Less than -0.05V (SHE))” and“Corrosion Potential Area (Less Than -0.0V (SHE))” respectively shown inFIGS. 7A and 7B. When a longer lifetime of the nuclear power plant 10 isneeded, the corrosion potential of the metal components of the reactorstructural materials is set within regions identified as “CorrosionPotential Area (Less Than -0.1V (SHE))” and “Corrosion Potential Area(Less Than -0.05V (SHE))” respectively shown in FIGS. 8A and 8B.

FIG. 7A and FIG. 8A respectively show curves L and L₁ each indicatingthe relationship between the thickness of the oxide film 51 having theproperties of the P-type semiconductor and the amount of the depositedcatalytic substance 52, i.e., titanium oxide (TiO₂) when austeniticstainless steel, SUS316L, is used as the metal base material 50. Thesolid line L in FIG. 7A is a corrosion potential curve that yields acorrosion potential of -0.05V(SHE), and the solid line L₁ in FIG. 8A isa corrosion potential curve that yields a corrosion potential of -0.01V(SHE).

FIG. 7B and FIG. 8B respectively show curves M and M₁ each indicatingthe relationship between the thickness of the oxide film 51 composed ofan oxide having the properties of a P-type semiconductor and the amountof the deposited catalytic substance 52, i.e., titanium oxide (TiO₂)when a Ni-based stainless steel alloy, Alloy 600,is used in the metalbase material 50. Substantially the same results are yielded by usingnickel oxide (NiO) instead of titanium oxide (TiO₂). Alloy 600 is aNi-based corrosion-resistant alloy having 0.05C-16Cr-8Fe as the maincomponent.

The solid line M in FIG. 7B is a corrosion potential curve that yields acorrosion potential of 0.0 V(SHE), and the solid line M₁ in FIG. 8B is acorrosion potential curve that yields a corrosion potential of −0.05V(SHE). When the metal base material 50 is composed of a Ni-basedstainless steel alloy, Alloy 600 (Inconel 600), the use in a region Ifor a normal lifetime and in a region I¹ for an extended lifetime isavoided.

Third Embodiment

FIG. 9 is a graph related to a third embodiment of the presentinvention.

In the description of the third embodiment, the structures identical tothose of the first embodiment are referred to by the same referencenumerals to omit repeated explanation, and the effects identical tothose of the first embodiment are also attained, but omitted indescription to avoid redundancy.

The graph in FIG. 9 shows the corrosion potential characteristicsobserved from a test piece in which the metal base material 50 composedof SUS316L is coated with an Fe₃O₄ oxide film 51 having the propertiesof a P-type semiconductor and a thickness of 0.05 μm, and from a testpiece in which the metal base material 50 composed of a Ni-basedstainless steel alloy, i.e., Alloy 600,is coated with a NiO oxide film51 having a thickness of 0.05 μm, while varying the amount of titaniumoxide serving as the catalytic substance 52 deposited on the oxide film51.

The graph shows that as the amount of titanium oxide deposited on theoxide film 51 increases, the corrosion potential of the metal basematerial 50 decreases. A solid line N is a characteristic curve showingthe relationship between the corrosion potential of the metal basematerial 50 composed of SUS316L and the amount of titanium oxidedeposited. A dotted line O is a characteristic curve showing therelationship between the corrosion potential of the metal base material50 composed of Alloy 600 and the amount of titanium oxide deposited.

The curves N and O show that when 10 μg/cm² of titanium oxide serving asthe catalytic substance 52 is deposited, the corrosion potential of themetal base material 50 composed of SUS316L is lower or less than −0.05V(SHE) and that of the metal base material 50 composed of Alloy 600 islower or less than 0.0 V(SHE) due to the interaction with the P-typesemiconductor. This result shows that stress corrosion cracking can besufficiently suppressed by depositing the titanium oxide of the amountof 10 μg/cm² or more serving as the catalytic substance 52.

Fourth Embodiment

A fourth embodiment of the present invention will now be described withreference to FIGS. 1, 2, and 10 to 17.

The fourth embodiments represents a method of forming acorrosion-resistant coating, including a step of oxide film formation offorming an oxide film 51 having the properties of a P-type semiconductoron the surface of the nuclear power plant 10 shown in FIG. 1 and themetal base material 50, which is a structural component of the nuclearpower plant 10, and a step of catalytic substance deposition ofdepositing the catalytic substance 52 on the oxide film 51.

There are provided methods possible to form a corrosion-resistantcoating having the properties of a P-type semiconductor on the surfaceof the metal base material 50, the method including a method ofpreliminarily forming the coating before the metal base material 50 isprocessed and shipped as the reactor structural materials, a method offorming the coating during a trial run or operation after the structuralmaterials are installed in the nuclear power plant 10, and a method offorming the coating during the operation of the nuclear power plant 10by controlling the water chemistry. A method of forming the oxide filmon the surface of the metal base material 50 according to any of thetiming may be employed.

The oxide film formed on the surface of the metal base material 50 isknown to undergo a significant change due to ambient aquaticenvironment. In this embodiment, a method of forming an oxide film thattakes into account the water chemistry controllable in the BWR 11 and areal plant is described from the viewpoint of preventing the corrosionof peripheral structural components such as those inside the BWR 11 andthe recirculation pipe 20.

[First Method of Forming the Resistant Oxide Film]

A first method of forming the oxide film includes an oxide film formingstep of forming the oxide film 51 having the properties of a P-typesemiconductor directly from the metal base material 50. This firstmethod is used when a new metal component is installed in the nuclearpower plant 10. The oxide film 51 is deposited by controlling theambient aquatic conditions.

The oxide film forming step for forming the oxide film 51 on the surfaceof the metal base material 50 in a real plant will be describedhereunder.

For example, in order to improve the reactor water chemistry of anactual plant in which hydrogen injection operation is already carriedout, dissolved hydrogen and dissolved oxygen are controlled at aninjection amount of 0.4 ppm, and the surfaces of an austenitic stainlesssteel, SUS316L are oxidized with high-temperature water of 280° C. Thedissolved oxygen concentration is about 10 ppb, and the dissolvedhydrogen concentration is 30 ppb or more, i.e., about 80 ppb. Thehydrogen injection is carried out by connecting the hydrogen injectionsystem 46 to the injection points P of the reactor primary coolingsystem 45 and the cooling water circulation system 12 of the nuclearpower plant 10.

In general, there are a large number of methods for forming an oxidefilm having the properties of a P-type semiconductor conducted in waterhaving reducing properties, in which the reactor water is maintained ata reducing state by hydrogen injection. As far as the water chemistry ofan actual plant is concerned, the hydrogen concentration in thefeedwater is preferably 1.0 ppm or less, in particular, about 0.3 ppmduring the operation of the nuclear power plant 10 sincehigh-concentration hydrogen injection disadvantageously increases theturbine-system dose rate during the operation. In a reducing atmosphere,the corrosion potential of the metal surface is maintained at a lowlevel. As shown in FIG. 10, the pH morphology of the ferrous oxidegreatly changes with the change in corrosion potential brought about bycontrolling the water chemistry.

By controlling the chemistry of the reactor water as mentioned above, anoxide film having the properties of a P-type semiconductor can beformed. With respect to the temperature for forming the oxide film, itis possible to choose one from a method forming an oxide film at roomtemperature which takes a longer time and a method of forming an oxidefilm at a temperature of reactor water, e.g., about 280° C., which takesinto account the actual operation of the reactor. It is possible tochoose the timing by taking into account the status of the actual plant,e.g., whether the plant is under inspection or in operation.

FIG. 11 is a graph showing the corrosion potential observed under thewater chemistry of the recirculation water in the reactor recirculationsystem 18 in which the hydrogen concentration in the feedwater is 1.0ppm or less, in particular, about 0.3 ppm. In the observation, a testpiece in which an oxide having properties of a P-type semiconductor wasformed on the metal surface of SUS316L according to the first method offorming the oxide film was used. Before the corrosion potential testing,the test piece was exposed to high-temperature of 280° C. under thewater chemistry of the reactor water at the reactor bottom (lowerplenum), i.e., a feedwater hydrogen concentration of 0.4 ppm, for 500hours. The surface of the resulting test piece was subjected to Ramananalysis. The crystal morphology was confirmed to be Fe₃O₄.

Titanium oxide of an amount of 200 μg/cm² was deposited on the Fe₃O₄oxide film 51 by using a sprayer 60 such as shown in FIG. 12.

The sprayer 60 has a spray main unit 61 equipped with a solution tank 62for storing titanium oxide, i.e., the catalytic substance. Deposition ofan adequate amount of titanium oxide on the test piece can be carriedout by rotating an adjustor knob 64 to adjust the nozzle opening of aspray nozzle 63 attached to the front end of the spray main unit 61,connecting the spray main unit 61 to a gas supply (gas cylinder) 67containing nitrogen gas or inert gas via a gas feed pipe 66 equippedwith a flow adjustor valve 65, and then pulling a spray switch 68 whichfunctions as a control lever. Titanium oxide, which is the catalyticsubstance, is sucked out by the flow of the inert or nitrogen gas and issprayed toward the test piece from the nozzle opening of the spraynozzle 63.

Using this sprayer 60, titanium oxide serving as the catalytic substancewas deposited onto the SUS316L test piece having the Fe₃O₄ oxide film51. The test piece provided with a required amount of titanium oxide wassubjected to corrosion potential testing in water having recirculationwater chemistry in the reactor recirculation system 18, as shown in FIG.11.

FIG. 11 shows that, in corrosion potential analysis of the test piece, atemperature elevation process (heating process) of recirculation waterwas conducted up to 200 minutes after initiation of the analysis andthat the corrosion potential was measured at a constant recirculationwater temperature after the temperature elevation process.

The recirculation water had a dissolved oxygen concentration of about 10ppb, a dissolved hydrogen concentration of 30 ppb or more, in particular31 ppb, and a hydrogen peroxide concentration of 65 ppb. The operationconditions, such as 280° C. high-temperature water and a pressure of 8.5MPa, applicable to an actual plant were satisfied. As is apparent fromthe observed results of the corrosion potential, the corrosion potentialof the test piece having titanium oxide deposited on the Fe₃O₄ oxidefilm 51 could be decreased to −0.1 V(SHE) or less, i.e., about −0.15V(SHE), under the water chemistry of the recirculation water having afeedwater hydrogen concentration of 0.3 ppm, thereby improving thecorrosion resistance. The test piece having no titanium oxide depositedon the Fe₃O₄ oxide film exhibited a corrosion potential increasing withtime. The corrosion potential in this case is expected to furtherincrease if the test is carried out for a longer time.

[Second Method of Forming the Oxide Film]

A second method of forming the oxide film includes a step of depositingatoms that constitute a P-type semiconductor onto the surface of themetal base material 50 and allowing an oxide having the properties ofthe P-type semiconductor to form by controlling the ambient aquaticconditions.

Although FIG. 1 shows the cooling water circulation system 12 of thenuclear power plant 10 in which the hydrogen injection system 46 isconnected through the injection points P. In this method, a solutioninjection system 70 (shown in FIG. 13) including atoms which constitutethe P-type semiconductor should be connected to the injection points P(Pa and Pb) to replace the hydrogen injection system 46.

The solution injection system 70 containing atoms constituting theP-type semiconductor has a structure shown in FIG. 13 and is connectedto the injection points P of the cooling water circulation system 12. Asshown in FIG. 13, the solution injection system 70 includes a hydrogentank 71 which is connected to the injection point Pa of the coolingwater circulation system 12 via a hydrogen feeding pipe 73 equipped witha flow adjustor valve 72. Hydrogen gas inside the hydrogen tank 71 isinjected into the cooling water circulation system 12 from the injectionpoint Pa.

A solution 75 containing atoms which constitute the P-type semiconductoris stored in a solution tank 76, and the solution tank 76 is connectedto the injection point Pb of the cooling water circulation system 12 viaa solution injection pipe 78 having an injection pump 77.

In this second method of forming the oxide film, the injection pump 77shown in Fig. 13 is operated to inject atoms constituting the P-typesemiconductor into the cooling water circulation system 12. The atomscirculate inside the cooling water circulation system 12 with coolingwater and are deposited onto the surface of the metal base material 50constituting the reactor structural components.

The deposition of the atoms constituting the P-type semiconductor may beconducted during the shutdown or running operation of the reactor. Inorder to form an oxide having properties of a P-type semiconductor fromthe deposited atoms, the hydrogen gas controlled with the flow adjustorvalve 72 in FIG. 13 is injected to change the chemistry of the reactorwater.

In this manner, the ambient aquatic environment and potential can becontrolled, and the atoms deposited on the metal surface can be growninto an oxide having the properties of the P-type semiconductor. As thedeposited atoms form an oxide, an oxide film functioning as acorrosion-resistant coating is formed on the surfaces (including innersurfaces) of the metal base material 50.

FIG. 14 is a graph showing the corrosion potential of a test pieceobserved under the water chemistry of the recirculation water having afeedwater hydrogen concentration of 0.3 ppm. The test piece includes anoxide having the properties of the P-type semiconductor formed on thesurface of an austenitic stainless steel, SUS316L by the second methodof forming the oxide film.

In this corrosion potential test, a Zn solution is injected to form theoxide film 51 on the surface of SUS316L. An oxide of ZnCr₂O₄ is formedon the surface of SUS316L by injecting the Zn solution. Titanium oxideserving as the catalytic substance is deposited in an amount of 70μg/cm² on the oxide film 51 on SUS316L of this test piece by using aplasma spraying equipment (not shown in the drawing) in a catalyticsubstance deposition step. By depositing a required amount of titaniumoxide on the ZnCr₂O₄ oxide film 51, the corrosion potential can bedecreased to −0.1 V(SHE) or less under the water chemistry of therecirculation water having a feedwater hydrogen concentration of 0.3ppm.

[Third Method of Forming an Oxide Film]

A third method of forming an oxide film includes a step of changing theproperties of the existing oxide film 51 on the metal base material 50by controlling the ambient aquatic environment and a catalytic substancedeposition step of depositing a catalytic substance on the oxide film.In an actual plant, the operation is conducted under various waterqualities or chemistries, such as those required for operation of areactor without hydrogen injection or for ultra-low iron operation,depending the type of the nuclear power plant 10. Thus, the propertiesof the oxide film 51 formed on the metal base material 50 are alsodifferent.

By converting the oxide film 51 of the metal base material 50 throughthe controlling of the chemistry of the reactor water and potential, anoxide having the properties of a P-type semiconductor is produced.Alternatively, the metal base material 50 may be, for example,chemically decontaminated to expose the surface, and then an oxidehaving the properties of a P-type semiconductor may be deposited thereonby the first or second method of forming the oxide film so that adesired oxide film 51 can be formed on the surface of the metal basematerial 50.

FIG. 15 shows corrosion potential of a test piece observed under thewater chemistry of recirculation water having a feedwater hydrogenconcentration of 0.3 ppm. The test piece had an oxide having theproperties of a P-type semiconductor deposited on the surface of anaustenitic stainless steel, SUS304L.

In this corrosion potential test, a test piece having an Fe₂O₃ oxidefilm was treated in water at 280° C. having a dissolved oxygenconcentration of about 10 ppb and a dissolved hydrogen concentration of30 ppb or more, in particular, about 80 ppb, for 100 hours.Subsequently, the test piece was subjected to surface analysis. Theresults showed that the oxide film was changed to an oxide film mainlycomposed of Fe₃O₄.

Subsequently, in the catalytic substance deposition step, a requiredamount, for example, 120 μg/cm², of titanium oxide was deposited using atitanium oxide water chemistry deposition device 80 shown in FIG. 16.The water chemistry deposition is a method of injecting a titanium oxidesolution of a particular concentration into high-temperature water andcontrolling the temperature, flow rate, titanium oxide concentration,and duration to deposit titanium oxide on the metal surfaces. Thiscorrosion potential test was conducted at 200° C., a flow rate of 9.6m/s, and a titanium oxide concentration of 10 ppm for 24 hours. Thewater chemistry was controlled to that of the core bottom water having afeedwater hydrogen concentration of 0.4 ppm.

The water chemistry deposition device 80 is an experimental devicehaving a structure shown in FIG. 16. The water chemistry depositiondevice 80 has a water chemistry (chemistry) control system 82 formaintaining and controlling the chemistry of water inside a water tank81 and a catalytic substance deposition controlling system 83 forcontrolling the amount of the catalytic substance deposited on the testpiece.

Using a resin 86, such as an ion exchange resin, and a hollow fibermembrane filter 87, the water chemistry control system 82 purifies thewater fed from the catalytic substance deposition controlling system 83to the water tank 81 via a heat exchanger 84 and a cooling tower 85 tothereby produce pure water. The property of the resulting water isanalyzed with a dissolved hydrogen meter 88, a dissolved oxygen meter89, and a conductivity meter 90 to control the properties of the waterinside the water tank 81 to the target levels.

The water (pure water) having its chemistry controlled through the resin86 and the hollow fiber membrane filter 87 is temporarily stored in thewater tank 81 and fed to the catalytic substance deposition controllingsystem 83 using a high-pressure pump 91 via the heat exchanger 84.

The catalytic substance deposition controlling system 83 is a closedcirculation cycle 95. An example of injecting a titanium oxide (TiO₂)solution as the catalytic substance into the closed circulation cycle 95will be described below.

The closed circulation cycle 95 includes a test piece deposition section96 containing the test piece, a circulation pump 97 for controlling theamount and flow rate of water circulated, and a heat exchanger 98. Thesethree devices are provided sequentially in this order. The suction sideof the circulation pump 97 can in-take pure water fed from the waterchemistry control system 82. The discharge side of the circulation pump97 can discharge the pumped-out water to the water chemistry controlsystem 82.

FIG. 17 is a graph showing the change in amount of deposited titaniumoxide over time when titanium oxide serving as the catalytic substance52 is deposited on the oxide film 51 of the test piece using the waterchemistry deposition device 80. The graph shows that the amount of thetitanium oxide deposited increases with an increase in flow rate in theclosed circulation cycle 95. The time required for depositing a targetamount of titanium oxide can be easily estimated by controlling theconcentration of the titanium oxide injected and the temperature.

By converting the test piece deposition section 96, it becomes possibleto deposit the catalytic substance, i.e., titanium oxide, onto surfacesof a reactor structural metal component having a different shape. In acase of installing a new reactor structural component, such asreplacement of the recirculation pipe 20, it is possible to deposit anadequate amount of titanium oxide serving as the catalytic substance 52on an existing oxide film 51 exhibiting the properties of a P-typesemiconductor.

In an actual plant, the deposition of the catalytic substance 52 can beconducted by connecting a titanium oxide injection device, not shown, tothe injection points P shown in FIG. 1. The deposition is possibleduring the reactor shutdown operation or during the running operation.As is apparent from the graph of FIG. 15, titanium oxide deposited onthe oxide film 51 by water chemistry deposition using the waterchemistry deposition device 80 can decrease the corrosion potential to−0.1 V(SHE) or less, and sufficient corrosion prevention effects can beefficiently exhibited.

Fifth Embodiment

A method of driving a reactor according to a fifth embodiment of thepresent invention will be further described hereunder with reference toFIGS. 18 to 21.

In consideration of the fact that measurement of the corrosion potentialof the structural component surface of the reactor primary coolingsystem 45 and the cooling water circulation system 12 is difficult in anactual plant, in this embodiment, as shown in FIG. 1, the corrosionpotential analyzer 47 accommodating a corrosion potential monitoringtest piece 100 is provided to the nuclear power plant 10 so that thecorrosion potential of the structural components in the reactor watercan be simulated and that the safety of the structural components can bemonitored. The corrosion potential monitoring test piece 100 is exposedto high-temperature water from the BWR 11.

As shown in FIG. 18, the corrosion potential analyzer 47 is a unitincluding a main device 101, the corrosion potential monitoring testpiece 100, and a reference electrode 102 that can withstand highpressure. The corrosion potential monitoring test piece 100 and thereference electrode 102 are connected to an electrometer 104 via a cable103. The corrosion potential of the corrosion potential monitoring testpiece 100 measured with the electrometer 104 is input to a computer,i.e., a personal computer 105, either via a data cable 106 or by radiotransmission, stored, and processed. By monitoring the processed data,the durability of the structural components and the properties of theoxide film can be monitored.

The main device 101 having the corrosion potential monitoring test piece100 and the reference electrode 102 of the corrosion potential analyzer47 is detachably attached to the recirculation pipe 20 of the reactorrecirculation system 18, as shown in FIG. 1. Alternatively, the maindevice 101 may be attached to the cooling water circulation system 12 orthe reactor primary cooling system 45.

FIGS. 19 to 21 are graphs showing the change in corrosion potential ofthe structural component of the nuclear power plant 10 in time elapsingdue to changes in water chemistry.

The graph in FIG. 19 shows the corrosion potential of a test piece inwhich an Fe₃O₄ oxide film 51 is formed on the surface of SUS316L underthe water chemistry corresponding to that of the recirculation waterhaving a feedwater hydrogen concentration of 0.3 ppm and in which 70μg/cm² of titanium oxide serving as the catalytic substance 52 isdeposited onto the oxide film 51 by spraying. The first 200 minutes fromthe start of corrosion potential testing was spent for adjusting thewater chemistry and measurement conditions under elevating temperature.Under the water chemistry corresponding to that of recirculation waterhaving a feedwater hydrogen concentration of 0.3 ppm, a low corrosionpotential was maintained due to the presence of titanium oxide, and thecorrosion potential of the test piece was not more than −0.1 V(SHE).

On the next day, the water chemistry was controlled to that of therecirculation water having a feedwater hydrogen concentration of 0.1ppm. The results of the corrosion potential measurement are shown inFIG. 20. Under the water chemistry corresponding to a feedwater hydrogenconcentration of 0.1 ppm, the corrosion potential increased to a level0.0 V(SHE) or higher despite the deposition of titanium oxide. Theseresults show that under an oxidizing atmosphere corresponding to afeedwater hydrogen concentration of 0.1 ppm, the metal surface cannotmaintain the properties or performances of the P-type semiconductor, andthe pn-junction face cannot be utilized. In other words, the effect ofsuppressing recombination of an electron and a hole is no longerexhibited, and the thermally excited electron recombines with the hole.

Two days after, the water chemistry was changed to that of PLR (PrimaryLoop Recirculation) with a feedwater hydrogen concentration of 0.7 ppmor more, e.g., 0.7 ppm, to monitor the change in corrosion potential. InFIG. 21, the objective is to restore the P-type semiconductor propertiesin the oxide film in a reducing atmosphere corresponding to a feedwaterhydrogen concentration of 0.7 ppm until up to about 450 minutes. Asshown in the graph, the corrosion potential of the test piece withtitanium oxide deposited thereon significantly decreased to about −0.55V(SHE).

As shown in FIG. 10, it can be assumed that the oxide film 51 changedfrom Fe₂O₃ to Fe₃O₄ due to the change in corrosion potential. After 500minutes, the water chemistry was controlled to that corresponding to afeedwater hydrogen concentration of 0.3 ppm, thereby decreasing thereducing atmosphere, and the corrosion potential was measured under asteady state. The results shown in FIG. 21 show that a corrosionpotential not exceeding −0.1 V(SHE) is maintained even after 1,000minutes. This shows that even when the oxide film 51 has experienced theoxidizing atmosphere and changed in properties, the P-type semiconductorproperties can be restored in the oxide film 51 by decreasing thecorrosion potential to, for example, −0.5 V(SHE) or less in a reducingatmosphere, and that this oxide film 51 can still maintain a lowpotential in a moderately reducing atmosphere corresponding to afeedwater hydrogen concentration of 0.3 ppm.

In an actual plant, it is possible to maintain and restore thecorrosion-resistant coating and to thereby suppress corrosion of themetals of the reactor structural components by using the hydrogeninjection system 46 (see FIG. 1) to change the reactor water chemistryand by monitoring the corrosion potential to set the corrosion potentialof the material to the target level.

Sixth Embodiment

FIG. 22 is a graph for explaining a sixth embodiment of the presentinvention.

The graph shows the relationship between the corrosion potential of thestructural components used in the nuclear power plant 10 and the rate atwhich cracks are developed. The crack development rate indicated by thelongitudinal axis is logarithmically plotted. As the corrosion potentialdecreases, the crack development rate is largely decreased, showing thatthe development of the cracks is significantly suppressed.

It is a well-known fact that the corrosion potential under normal waterchemistry (NWC) of a typical BWR 11 is about +100 mV(SHE). The resultsof the monitoring of the corrosion potential of the reactor structuralcomponent indicate that the crack development rate can be reduced byabout one order of magnitude by maintaining the oxide film 51 such thatthe corrosion potential of the austenitic stainless steel (SUS304SS) is−50 mV(SHE) or less. This also shows that sufficient corrosionsuppressing effect is exhibited. The corrosion suppressing potential forthe Ni-based stainless steel alloy, such as Alloy 600,is also evaluatedbased on the same concept.

In the graph shown in FIG. 22, “K” represents a stress intensity factorindicating susceptibility of reactor structural components to crack, and“μS/cm” is a value indicating the purity of water, such as reactorwater. In a typical reactor 11, a purity of about 1.0 μS/cm is observedduring the inspection.

FIG. 22 shows that the crack development rate observed with reactorwater having a purity as high as 0.1 μS/cm is significantly lower thanthat with reactor water having a purity of 0.3 μS/cm even when thecorrosion potentials of the reactor structural components are the same.

Note that although the embodiments above concern application of thereactor recirculation system to boiling water reactors havingcirculation pumps outside the reactor, application to improved boilingwater reactors having reactor recirculation pumps inside the reactorpressure vessels is also possible. The present invention can also beapplied to nuclear power plants having pressurized-water reactors andCANDU reactors (Canadian deuterium uranium reactors).

1. A nuclear power plant comprising a nuclear reactor in which ahydrogen concentration of water is controlled, wherein the nuclearreactor comprises: a metal component of a reactor structure having asurface that is exposed to a high-temperature water; an oxide filmhaving a corrosion-resistant property formed on the surface of the metalcomponent; and a catalytic substance excited by heat and deposited onthe oxide film, wherein the oxide film has a thickness of from 0.01 μmto 5 μm and comprises at least one of Fe₃O₄, NiO, and ZnCr₂O₄, which iscomposed of particles having an average particle diameter of 1 μm orless, and wherein the catalytic substance is TiO₂, which is deposited onthe oxide film in an amount of from 10 μg/cm² to 50 μg/cm².
 2. Thenuclear power plant according to claim 1, wherein the high-temperaturewater has a temperature of 150° C. or higher.
 3. The nuclear power plantaccording to claim 1, wherein the metal component is made of a stainlesssteel, a non-steel material, or a non-ferrous metal.
 4. The nuclearpower plant according to claim 1, wherein the metal component comprisesa stainless steel.
 5. The nuclear power plant according to claim 1,wherein the metal component comprises a non-steel material.
 6. Thenuclear power plant according to claim 1, wherein the metal componentcomprises a non-ferrous metal.
 7. The nuclear power plant according toclaim 1, wherein the oxide film comprises Fe₃O₄.
 8. The nuclear powerplant according to claim 1, wherein the oxide film comprises NiO.
 9. Thenuclear power plant according to claim 1, wherein the oxide filmcomprises ZnCr₂O₄.
 10. The nuclear power plant according to claim 1,wherein the oxide film comprises particles of at least one of Fe₃O₄, NiOand ZnCr₂O₄, wherein the particles have an average particle diameter ofless than 1 μm.
 11. The nuclear power plant according to claim 1,wherein the oxide film comprises particles of at least one of Fe₃O₄, NiOand ZnCr₂O₄, wherein the particles have an average particle diameter of0.01-0.1 μm.
 12. The nuclear power plant according to claim 1, whereinthe oxide film comprises particles of at least one of Fe₃O₄, NiO andZnCr₂O₄, wherein the particles have an average particle diameter of0.001-0.1 μm.
 13. The nuclear power plant according to claim 1, whereinthe oxide film comprises particles of at least one of Fe₃O₄, NiO andZnCr₂O₄, wherein the particles have an average particle diameter of from0.001 μm to 0.01 μm.
 14. The nuclear power plant according to claim 1,wherein the metal component comprises an austenitic stainless steel. 15.The nuclear power plant according to claim 14, wherein the austeniticstainless steel comprises molybdenum.